A Ferromagnetic Oxide Semiconductor as Spin Injection Electrode in Magnetic Tunnel Junction

Broadband ferromagnetic resonance linewidth measurement of magnetic tunnel junction multilayers

The broadband ferromagnetic resonance FMR linewidth of the free layer of magnetic tunnel junctions is used as a simple diagnostic of the quality of the magnetic structure. The FMR linewidth increases near the field regions of free layer reversal and pinned layer reversal, and this increase correlates with an increase in magnetic hysteresis in unpatterned films, low-frequency noise in patterned ...

Josephson Current in a Ferromagnetic Semiconductor/Semiconductor/Ferromagnetic Semiconductor Junction with Superconducting Contacts

Current spin polarization and spin injection efficiency in ZnO-based ferromagnetic semiconductor junctions

Gang JI 1,2,3)∗, Ze ZHANG , Yanxue CHEN , Shishen YAN , Yihua LIU 3) and Liangmo MEI 3) 1) Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124, China 2) Institute of Biophysics, Chinese Academy of Sciences, Beijing 100101, China 3) School of Physics and National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100,...

Giant thermal spin-torque-assisted magnetic tunnel junction switching.

Spin-polarized charge currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer torque (STT). Recently, by taking advantage of the spin-dependent thermoelectric properties of magnetic materials, novel means of generating spin currents from temperature gradients, and their associated thermal-spin torques (TSTs), have been proposed, but so far these TSTs have not been la...

Compact thermal modeling of spin transfer torque magnetic tunnel junction

Article history: Received 25 May 2015 Received in revised form 20 June 2015 Accepted 20 June 2015 Available online xxxx